Three-dimensionally stretchable single crystalline semiconductor membrane

• Main Authors: Bedell, Stephen W, Fogel, Keith E, Reznicek, Alexander, Hekmatshoartabari, Bahman, Hashemi, Pouya, Balakrishnan, Karthik
• Format: Patent
• Language: English
• Published: 11.07.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; BORING; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; PERFORMING OPERATIONS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TRANSPORTING; TURNING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A structure including a three-dimensionally stretchable single crystalline semiconductor membrane located on a substrate is provided. The structure is formed by providing a three-dimensional (3D) wavy silicon germanium alloy layer on a silicon handler substrate. A single crystalline semiconductor material membrane is then formed on a physically exposed surface of the 3D wavy silicon germanium alloy layer. A substrate is then formed on a physically exposed surface of the single crystalline semiconductor material membrane. The 3D wavy silicon germanium alloy layer and the silicon handler substrate are thereafter removed providing the structure.