Copper deposition in wafer level packaging of integrated circuits

An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydri...

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Bibliographic Details
Main Authors Commander, John, Whitten, Kyle, Paneccasio, Jr., Vincent, Richardson, Thomas, Hurtubise, Richard
Format Patent
LanguageEnglish
Published 11.07.2023
Subjects
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOSITIONS BASED THEREON
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
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Summary:An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.
Bibliography:Application Number: US202117400633