Semiconductor device having modified profile metal gate

A semiconductor device has a semiconductor substrate with a dielectric layer disposed thereon. A trench is defined in the dielectric layer. A metal gate structure is disposed in the trench. The metal gate structure includes a first layer and a second layer disposed on the first layer. The first laye...

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Bibliographic Details
Main Authors Wann, Clement Hsingjen, Tsai, Ming-Huan, Huang, Yu-Lien, Liu, Chi-Wen, Chen, Zhao-Cheng
Format Patent
LanguageEnglish
Published 27.06.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device has a semiconductor substrate with a dielectric layer disposed thereon. A trench is defined in the dielectric layer. A metal gate structure is disposed in the trench. The metal gate structure includes a first layer and a second layer disposed on the first layer. The first layer extends to a first height in the trench and the second layer extends to a second height in the trench; the second height is less than the first height.
Bibliography:Application Number: US202117301467