Magnetic memory device

• Main Authors: Hong, Kyungil, Jeong, Hyungjong, Kim, Younghyun, Oh, Se Chung, Kim, Ki Woong, Park, Junghwan, Lee, Jungmin, Bae, Byoungjae
• Format: Patent
• Language: English
• Published: 20.06.2023
• Subjects: ELECTRICITY

A magnetic memory device may include an interlayer insulating layer on a substrate, a bottom electrode contact disposed in the interlayer insulating layer, and a magnetic tunnel junction pattern on the bottom electrode contact. The bottom electrode contact may include a second region and a first region, which are sequentially disposed in a first direction perpendicular to a top surface of the substrate so that the second region is between the first region and the top surface of the substrate. A first width of the first region may be smaller than a second width of the second region, when measured in a second direction parallel to the top surface of the substrate.