Integrated circuit (IC) package with stacked die wire bond connections, and related methods
An integrated circuit (IC) package with stacked die wire bond connections has two stacked IC dies, where a first die couples to a metallization structure directly and a second die stacked on top of the first die connects to the metallization structure through wire bond connections. The IC dies are c...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
13.06.2023
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Subjects | |
Online Access | Get full text |
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Summary: | An integrated circuit (IC) package with stacked die wire bond connections has two stacked IC dies, where a first die couples to a metallization structure directly and a second die stacked on top of the first die connects to the metallization structure through wire bond connections. The IC dies are coupled to one another through an interior metal layer of the metallization structure. Vias are used to couple to the interior metal layer. |
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Bibliography: | Application Number: US202117158374 |