Magnetic memory devices

A magnetic memory device includes a magnetic tunnel junction pattern on a substrate, a first conductive pattern between the substrate and the magnetic tunnel junction pattern, lower contact plugs between the first conductive pattern and the substrate and disposed at respective sides of the magnetic...

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Bibliographic Details
Main Authors Lee, Kilho, Koh, Gwanhyeob
Format Patent
LanguageEnglish
Published 30.05.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A magnetic memory device includes a magnetic tunnel junction pattern on a substrate, a first conductive pattern between the substrate and the magnetic tunnel junction pattern, lower contact plugs between the first conductive pattern and the substrate and disposed at respective sides of the magnetic tunnel junction pattern, and second conductive patterns on the lower contact plugs, respectively. The second conductive patterns connect the lower contact plugs to the first conductive pattern. The second conductive patterns include a ferromagnetic material.
Bibliography:Application Number: US202117546107