Improving surface topography by forming spacer-like components

A wafer having a first region and a second region is provided. A first topography variation exists between the first region and the second region. A first layer is formed over the first region and over the second region of the wafer. The first layer is patterned. A patterned first layer causes a sec...

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Bibliographic Details
Main Authors Shiu, Feng-Jia, Wu, Chun-Chang, Chang, Wei-Lin, Cheng, Chihy-Yuan, Chen, Sz-Fan, Kuo, Ching-Sen, Chen, Chun-Chang, Yang, Shun-Shing
Format Patent
LanguageEnglish
Published 30.05.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A wafer having a first region and a second region is provided. A first topography variation exists between the first region and the second region. A first layer is formed over the first region and over the second region of the wafer. The first layer is patterned. A patterned first layer causes a second topography variation to exist between the first region and the second region. The second topography variation is smoother than the first topography variation. A second layer is formed over the first region and the second region. At least a portion of the second layer is formed over the patterned first layer.
Bibliography:Application Number: US202217694320