Display apparatus having a silicon nitride buffer layer and method of manufacturing the same

• Main Authors: Kwak, Eunjin, Woo, Yeoungkeol, Chung, Yungbin
• Format: Patent
• Language: English
• Published: 23.05.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A display apparatus includes a substrate. A first buffer layer is disposed over the substrate. The first buffer layer includes silicon nitride and has an atomic percentage of hydrogen bonded to silicon of about 0.36 to about 1.01. A thin film transistor is disposed over the first buffer layer. The t...