Display apparatus having a silicon nitride buffer layer and method of manufacturing the same
A display apparatus includes a substrate. A first buffer layer is disposed over the substrate. The first buffer layer includes silicon nitride and has an atomic percentage of hydrogen bonded to silicon of about 0.36 to about 1.01. A thin film transistor is disposed over the first buffer layer. The t...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
23.05.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A display apparatus includes a substrate. A first buffer layer is disposed over the substrate. The first buffer layer includes silicon nitride and has an atomic percentage of hydrogen bonded to silicon of about 0.36 to about 1.01. A thin film transistor is disposed over the first buffer layer. The thin film transistor includes an active layer. A display element is electrically connected to the thin film transistor. |
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Bibliography: | Application Number: US202017134585 |