Integrated circuit structure and method of forming the same

An integrated circuit structure includes a first well, a second well, a third well, a first set of implants and a second set of implants. The first well includes a first dopant type, a first portion extending in a first direction and having a first width, and a second portion adjacent to the first p...

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Bibliographic Details
Main Authors Sio, Kam-Tou, Chen, Chih-Liang, Tzeng, Jiann-Tyng, Chiu, Yi-Hsun, Young, Charles Chew-Yuen, Zhuang, Hui-Zhong
Format Patent
LanguageEnglish
Published 16.05.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An integrated circuit structure includes a first well, a second well, a third well, a first set of implants and a second set of implants. The first well includes a first dopant type, a first portion extending in a first direction and having a first width, and a second portion adjacent to the first portion of the first well, extending in the first direction and having a second width. The second well has a second dopant type and is adjacent to the first well. The third well has the second dopant type, and is adjacent to the first well. The first portion of the first well is between the second well and the third well. The first set of implants is in the first portion of the first well, the second well and the third well. The second set of implants is in the second portion of the first well.
Bibliography:Application Number: US202017132447