Gap fill void and connection structures

The present disclosure relates to semiconductor structures and, more particularly, to gap fill void and connection structures and methods of manufacture. The structure includes: a gate structure comprising source and drain regions; a gate contact in direct contact and overlapping the gate structure;...

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Bibliographic Details
Main Authors Ren, Yuping, Ackmann, Paul, Huang, Haigou, Ning, Guoxiang
Format Patent
LanguageEnglish
Published 16.05.2023
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Summary:The present disclosure relates to semiconductor structures and, more particularly, to gap fill void and connection structures and methods of manufacture. The structure includes: a gate structure comprising source and drain regions; a gate contact in direct contact and overlapping the gate structure; and source and drain contacts directly connecting to the source and drain regions, respectively.
Bibliography:Application Number: US202117145555