Gap fill void and connection structures

The present disclosure relates to semiconductor structures and, more particularly, to gap fill void and connection structures and methods of manufacture. The structure includes: a gate structure comprising source and drain regions; a gate contact in direct contact and overlapping the gate structure;...

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Bibliographic Details
Main Authors Ren, Yuping, Ackmann, Paul, Huang, Haigou, Ning, Guoxiang
Format Patent
LanguageEnglish
Published 16.05.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure relates to semiconductor structures and, more particularly, to gap fill void and connection structures and methods of manufacture. The structure includes: a gate structure comprising source and drain regions; a gate contact in direct contact and overlapping the gate structure; and source and drain contacts directly connecting to the source and drain regions, respectively.
Bibliography:Application Number: US202117145555