Semiconductor device formed on SOI substrate

A semiconductor device is disclosed. The semiconductor device includes impurity regions formed in surface portions of a substrate, gate structures formed on surface portions of the substrate between the impurity regions, a first insulating layer formed on the impurity regions and the gate structures...

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Bibliographic Details
Main Authors Kim, Hae Taek, Eom, Seung Hyun, Koo, Ja Geon, Jung, Jin Hyo, Lim, Ki Won, Lee, Sang Yong, Lee, Hyun Joong
Format Patent
LanguageEnglish
Published 02.05.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device is disclosed. The semiconductor device includes impurity regions formed in surface portions of a substrate, gate structures formed on surface portions of the substrate between the impurity regions, a first insulating layer formed on the impurity regions and the gate structures, first wiring patterns formed on the first insulating layer, and first contact patterns connecting the impurity regions and the first wiring patterns through the first insulating layer, and the first wiring patterns are arranged in a zigzag shape.
Bibliography:Application Number: US202117460998