Method of fabricating semicondoctor device
A method for fabricating a semiconductor device includes: forming a first gate dielectric layer in a first and a second regions of a peripheral region of a substrate; forming a first conductive layer and a first hard mask layer over the substrate; forming a first mask layer on the first hard mask la...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
25.04.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A method for fabricating a semiconductor device includes: forming a first gate dielectric layer in a first and a second regions of a peripheral region of a substrate; forming a first conductive layer and a first hard mask layer over the substrate; forming a first mask layer on the first hard mask layer in the first region; removing the first hard mask layer outside the first region; removing the first hard mask layer; performing a wet etch process by taking the first hard mask layer as a mask, and removing the first conductive layer and the first gate dielectric layer outside the first region; removing the first hard mask layer and the first conductive layer; forming a second gate dielectric layer in the second region; and forming a first and a second gate conductive layers in the first and the second regions respectively. |
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Bibliography: | Application Number: US202117317872 |