Method of fabricating semicondoctor device

• Main Authors: Liao, Hsiu-Han, Chuang, Che-Fu
• Format: Patent
• Language: English
• Published: 25.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for fabricating a semiconductor device includes: forming a first gate dielectric layer in a first and a second regions of a peripheral region of a substrate; forming a first conductive layer and a first hard mask layer over the substrate; forming a first mask layer on the first hard mask layer in the first region; removing the first hard mask layer outside the first region; removing the first hard mask layer; performing a wet etch process by taking the first hard mask layer as a mask, and removing the first conductive layer and the first gate dielectric layer outside the first region; removing the first hard mask layer and the first conductive layer; forming a second gate dielectric layer in the second region; and forming a first and a second gate conductive layers in the first and the second regions respectively.