Microelectronic devices including isolation structures neighboring staircase structures, and related memory devices, electronic systems, and methods

A microelectronic device comprises a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, a staircase structure within the stack structure having steps comprising horizontal edges of the tiers, a first insulative material...

Full description

Saved in:
Bibliographic Details
Main Authors Jain, Harsh Narendrakumar, Chary, Indra V, Luo, Shuangqiang
Format Patent
LanguageEnglish
Published 25.04.2023
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:A microelectronic device comprises a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, a staircase structure within the stack structure having steps comprising horizontal edges of the tiers, a first insulative material vertically overlying the staircase structure, conductive contact structures comprising a conductive material extending through the first insulative material and in contact with the steps of the staircase structure, and a second insulative material extending in a first horizontal direction between horizontally neighboring conductive contact structures and exhibiting one or more different properties than the first insulative material. Related microelectronic devices, electronic systems, and methods are also described.
Bibliography:Application Number: US202017078755