Integrated electronic circuit and method of making comprising a first transistor and a ferroelectric capacitor

The present invention relates to an integrated electronic circuit and method of making comprising a first transistor (1) and a ferroelectric capacitor (2). The ferroelectric capacitor (2) comprises a first electrode layer composed of a non-ferroelectric material, a ferroelectric interlayer having a...

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Bibliographic Details
Main Authors Kaempfe, Thomas, Polakowski, Patrick, Seidel, Konrad
Format Patent
LanguageEnglish
Published 25.04.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to an integrated electronic circuit and method of making comprising a first transistor (1) and a ferroelectric capacitor (2). The ferroelectric capacitor (2) comprises a first electrode layer composed of a non-ferroelectric material, a ferroelectric interlayer having a thickness that is less than the thickness of the first electrode layer, and a second electrode layer composed of a non-ferroelectric material, wherein the ferroelectric interlayer is arranged between the first electrode layer and the second electrode layer, and the first electrode layer is electrically conductively connected to a gate terminal of the first transistor (1).
Bibliography:Application Number: US202117317943