Channel configuration for improving multigate device performance and method of fabrication thereof

• Main Authors: Wu, Zhiqiang, Ho, Jon-Hsu, Cheng, Kuan-Lun, Hsieh, Wen-Hsing, Wang, Chih-Ching
• Format: Patent
• Language: English
• Published: 28.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary device includes a channel layer, a first source/drain feature, a second source/drain feature, and a metal gate. The channel layer has a first horizontal segment, a second horizontal segment, and a vertical segment connects the first horizontal segment and the second horizontal segment. The first horizontal segment and the second horizontal segment extend along a first direction, and the vertical segment extends along a second direction. The vertical segment has a width along the first direction and a thickness along the second direction, and the thickness is greater than the width. The channel layer extends between the first source/drain feature and the second source/drain feature along a third direction. The metal gate wraps channel layer. In some embodiments, the first horizontal segment and the second horizontal segment are nanosheets.