Capacitor structures for memory and method of manufacturing the same

A method of manufacturing a capacitor structure of memory, including forming a patterned photoresist layer on a hard mask layer and spacers on sidewalls of the patterned photoresist layer, perform a first etch process to remove uncovered hard mask layer so as to form first patterned hard mask layer...

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Bibliographic Details
Main Author Huang, Kai-Jyun
Format Patent
LanguageEnglish
Published 21.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a capacitor structure of memory, including forming a patterned photoresist layer on a hard mask layer and spacers on sidewalls of the patterned photoresist layer, perform a first etch process to remove uncovered hard mask layer so as to form first patterned hard mask layer and expose first portion of the dielectric layer, lowering a surface of the first portion of dielectric layer, perform a second etch process to remove uncovered first patterned hard mask layer so as to form second patterned hard mask layer and expose second portion of the dielectric layer, and performing a hole etching process to form first holes and second holes respectively in the first portion and the second portion of dielectric layer, wherein sidewalls of the first holes and second holes have wavelike cross-sections, and the wavelike cross-sections of first holes and second holes are shifted vertically by a distance.
Bibliography:Application Number: US202217838285