Semiconductor memory device and manufacturing method thereof

• Main Authors: Ikeno, Daisuke, Kajita, Akihiro
• Format: Patent
• Language: English
• Published: 14.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor memory device according to an embodiment includes a semiconductor substrate, a first insulating layer, a second insulating layer, the first insulating layer between the semiconductor substrate and the second insulating layer, a semiconductor layer between the first insulating layer and the second insulating layer, the semiconductor layer extending in a first direction parallel to a surface of the semiconductor substrate, a gate electrode layer extending in a direction perpendicular to the surface; a first insulating film between the semiconductor layer and the gate electrode layer, a second insulating film between the first insulating film and the gate electrode layer the second insulating film in contact with the first insulating layer and the second insulating layer, a polycrystalline silicon region between the first insulating film and the second insulating film; and a metal film between the polycrystalline silicon region and the second insulating film containing titanium and silicon.