Semiconductor structure integrated with magnetic tunneling junction

The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a transistor region, a metal interconnect, and a magnetic tunneling junction (MTJ). The transistor region includes a gate over the substrate, and a doped region is at least partially in the s...

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Bibliographic Details
Main Authors Chiang, Tien-Wei, Chuang, Harry-Hak-Lay, Kalnitsky, Alexander, Huang, Sheng-Haung
Format Patent
LanguageEnglish
Published 07.03.2023
Subjects
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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Summary:The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a transistor region, a metal interconnect, and a magnetic tunneling junction (MTJ). The transistor region includes a gate over the substrate, and a doped region is at least partially in the substrate. The metal interconnect is over the doped region. The metal interconnect includes a metal via. The MTJ is entirely underneath the metal interconnect and between the doped region and the metal via, and a diameter of a bottom surface of the MTJ is greater than a diameter of an upper surface of the MTJ.
Bibliography:Application Number: US202117343695