Enhancing performance of overlay metrology

A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second...

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Bibliographic Details
Main Authors Rothman, Nachshon, BenDavid, Nir, Gutman, Nadav, Levinski, Vladimir, Manassen, Amnon, Yaacov, Dror, Abramov, Avi, Simon, Yossi, Hill, Andrew, Reddy, Nireekshan K, Negri, Daria, Paskover, Yuri, Vaknin, Yonatan, Golotsvan, Anna, Uziel, Yoram
Format Patent
LanguageEnglish
Published 28.02.2023
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.
Bibliography:Application Number: US202117219869