Method for fabricating semiconductor device

A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; a first conductive pattern on the substrate; a second conductive pattern on the substrate and spaced apart from the first conductive pattern; an air spacer between the first conductive patter...

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Bibliographic Details
Main Authors Im, Ji Woon, Choi, Byoung Deog
Format Patent
LanguageEnglish
Published 21.02.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
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Summary:A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; a first conductive pattern on the substrate; a second conductive pattern on the substrate and spaced apart from the first conductive pattern; an air spacer between the first conductive pattern and the second conductive pattern; and a quantum dot pattern covering an upper part of the air spacer.
Bibliography:Application Number: US202117355272