Determining voltage offsets for memory read operations

• Main Authors: Feeley, Peter, Parthasarathy, Sivagnanam, Kaynak, Mustafa N, Ratnam, Sampath K, Nowell, Shane, Muchherla, Kishore Kumar
• Format: Patent
• Language: English
• Published: 21.02.2023
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A processing device of a memory sub-system is configured to identify a read level of a plurality of read levels associated with a voltage bin of a plurality of voltage bins of a memory device; assign a first threshold voltage offset to the read level of the voltage bin; assign a second threshold voltage offset to the read level of the voltage bin; perform, on block associated with the read level, a first operation of a first operation type using the first threshold voltage offset; and perform, on the blocks associated with the read level, a second operation of a second operation type using the second threshold voltage offset.