Determining voltage offsets for memory read operations

A processing device of a memory sub-system is configured to identify a read level of a plurality of read levels associated with a voltage bin of a plurality of voltage bins of a memory device; assign a first threshold voltage offset to the read level of the voltage bin; assign a second threshold vol...

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Bibliographic Details
Main Authors Feeley, Peter, Parthasarathy, Sivagnanam, Kaynak, Mustafa N, Ratnam, Sampath K, Nowell, Shane, Muchherla, Kishore Kumar
Format Patent
LanguageEnglish
Published 21.02.2023
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A processing device of a memory sub-system is configured to identify a read level of a plurality of read levels associated with a voltage bin of a plurality of voltage bins of a memory device; assign a first threshold voltage offset to the read level of the voltage bin; assign a second threshold voltage offset to the read level of the voltage bin; perform, on block associated with the read level, a first operation of a first operation type using the first threshold voltage offset; and perform, on the blocks associated with the read level, a second operation of a second operation type using the second threshold voltage offset.
Bibliography:Application Number: US202117233320