Capacitive pressure with Ti electrode

A capacitive sensor is disclosed. In an embodiment a semiconductor device includes a die including a capacitive pressure sensor integrated on a CMOS circuit, wherein the capacitive pressure sensor includes a first electrode and a second electrode separated from one another by a cavity, the second el...

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Bibliographic Details
Main Authors Faes, Alessandro, Pijnenburg, Remco Henricus Wilhelmus, Besling, Willem Frederik Adrianus, Siegert, Jörg, Vijayakumar, Kailash
Format Patent
LanguageEnglish
Published 21.02.2023
Subjects
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
PHYSICS
TESTING
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Summary:A capacitive sensor is disclosed. In an embodiment a semiconductor device includes a die including a capacitive pressure sensor integrated on a CMOS circuit, wherein the capacitive pressure sensor includes a first electrode and a second electrode separated from one another by a cavity, the second electrode including a suspended tensile membrane, and wherein the first electrode is composed of one or more aluminum-free layers containing Ti.
Bibliography:Application Number: US201916958269