Semiconductor device

A semiconductor device according to embodiments includes: a first conductivity-type first semiconductor layer set to a first potential; a second conductivity-type second semiconductor layer stacked on the first semiconductor layer and set to a second potential; an interlayer insulating film disposed...

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Bibliographic Details
Main Authors Shimura, Masahiro, Noguchi, Mitsuhiro
Format Patent
LanguageEnglish
Published 07.02.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device according to embodiments includes: a first conductivity-type first semiconductor layer set to a first potential; a second conductivity-type second semiconductor layer stacked on the first semiconductor layer and set to a second potential; an interlayer insulating film disposed on a main surface of the second semiconductor layer; a resistor disposed above the first semiconductor layer while interposing the second semiconductor layer and the interlayer insulating film therebetween; and a terminal electrically connected to the second semiconductor layer.
Bibliography:Application Number: US202117211035