Light-emitting diode grain structure with multiple contact points

• Main Authors: Huang, Kuo-Hsin, Chen, Fu-Bang
• Format: Patent
• Language: English
• Published: 31.01.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a light-emitting diode grain structure with multiple contact points, including a P-type electrode, a conductive base plate, a light-emitting semiconductor layer, a plurality of ohmic contact metal points, a mesh-structured connection conductive layer, a connection point conductive layer, and an N-type electrode pad electrically connected to the connection point conductive layer. The plurality of ohmic contact metal points is arranged on an N-type semiconductor layer in a spreading manner, and is contacted with the N-type semiconductor layer. No ohmic contact is formed between the connection conductive layer and the N-type semiconductor layer. Accordingly, the metal points and the connection conductive layer can disperse a current, reduce a shading area, and improve the luminous efficiency and component reliability; and uniform light emission from a surface facilitates the light distribution uniformity of an original light source and exciting light after phosphor is coated.