Semiconductor device and method of manufacturing the same

A semiconductor device is provided in the disclosure, including a substrate, multiple parallel fins protruding from the substrate and isolated by trenches, and a device insulating layer on the trenches between two fins, wherein the trench is provided with a central first trench and two second trench...

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Bibliographic Details
Main Authors Chiu, Cheng-Pu, Wang, Chih-Yi, Hsu, Tien-Shan, Wang, Yao-Jhan
Format Patent
LanguageEnglish
Published 31.01.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device is provided in the disclosure, including a substrate, multiple parallel fins protruding from the substrate and isolated by trenches, and a device insulating layer on the trenches between two fins, wherein the trench is provided with a central first trench and two second trenches at both sides of the first trench, and a depth of the first trench is deeper than a depth of the second trench, and the device insulating layer is provided with a top plane, a first trench and a second trench, and the fins protrude from the top plane, and the bottom surface of the second trench is lower than the bottom surface of the first trench.
Bibliography:Application Number: US202017075729