Methods for forming semiconductor devices

Methods of forming semiconductor devices are provided. The methods include: forming a trench in a substrate, wherein the trench includes a defect protruding from a bottom surface of the trench; forming a flowable material on the substrate to at least partially cover the defect; performing an etching...

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Bibliographic Details
Main Authors Chang, Pei-Yu, Liao, Chih-Cherng, Kan, Kai-Chuan, Kuo, Ya-Huei, Lee, I-Ping, Lee, Tsung-Hsiung, Wu, Zheng-Xian, Liu, Yow-Shiuan, Lin, Kwang-Ming, Chang, Ya-Ting, Chang, Yu-Jui
Format Patent
LanguageEnglish
Published 31.01.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods of forming semiconductor devices are provided. The methods include: forming a trench in a substrate, wherein the trench includes a defect protruding from a bottom surface of the trench; forming a flowable material on the substrate to at least partially cover the defect; performing an etching process to reduce the height of the defect; and removing the flowable material.
Bibliography:Application Number: US202117331018