Optoelectronic device comprising three-dimensional light-emitting diodes

An optoelectronic device including: a three-dimensional semiconductor element mostly made of a first chemical element and of a second chemical element; an active area at least partially covering the lateral walls of the three-dimensional semiconductor element and including a stack of at least a firs...

Full description

Saved in:
Bibliographic Details
Main Authors Amstatt, Benoît, Tchoulfian, Pierre, Gilet, Philippe
Format Patent
LanguageEnglish
Published 24.01.2023
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:An optoelectronic device including: a three-dimensional semiconductor element mostly made of a first chemical element and of a second chemical element; an active area at least partially covering the lateral walls of the three-dimensional semiconductor element and including a stack of at least a first layer mostly made of the first and second chemical elements, and of at least a second layer mostly made of the first and second chemical elements and of a third chemical element; a third layer covering the active area, the third layer being mostly made of the first, second, and third chemical elements and of a fourth chemical element, the mass proportion of the third and fourth chemical elements of the third layer increasing or decreasing as the distance to the substrate increases; and a fourth layer, mostly made of the first and second chemical elements, covering the third layer.
Bibliography:Application Number: US201816958130