Method of manufacturing semiconductor device having split-gate memory and MISFET

A trench is formed by removing a portion of each of the charge accumulation film and the insulating film located between the control gate electrode and the memory gate electrode. The insulating film is formed in the trench so that the upper surface of each of the insulating film and the charge accum...

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Bibliographic Details
Main Author Amo, Atsushi
Format Patent
LanguageEnglish
Published 24.01.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A trench is formed by removing a portion of each of the charge accumulation film and the insulating film located between the control gate electrode and the memory gate electrode. The insulating film is formed in the trench so that the upper surface of each of the insulating film and the charge accumulation film is covered with the insulating film. When exposing the upper surface of the control gate electrode and the memory gate electrode, the upper surface of each of the insulating film and the charge accumulation film is not exposed.
Bibliography:Application Number: US202016928854