Acoustic wave device, high-frequency front-end circuit, and communication device

An acoustic wave device includes a silicon support substrate that includes first and second main surfaces opposing each other, a piezoelectric structure provided on the first main surface and including the piezoelectric layer, an IDT electrode provided on the piezoelectric layer, a support layer pro...

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Bibliographic Details
Main Authors Sawamura, Makoto, Kishimoto, Yutaka, Kishi, Yuzo, Kai, Seiji
Format Patent
LanguageEnglish
Published 27.12.2022
Subjects
AMPLIFIERS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
TRANSMISSION
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Summary:An acoustic wave device includes a silicon support substrate that includes first and second main surfaces opposing each other, a piezoelectric structure provided on the first main surface and including the piezoelectric layer, an IDT electrode provided on the piezoelectric layer, a support layer provided on the first main surface of the silicon support substrate and surrounding the piezoelectric layer, a cover layer provided on the support layer, a through-via electrode that extending through the silicon support substrate and the piezoelectric structure, and a first wiring electrode connected to the through-via electrode and electrically connected to the IDT electrode. The piezoelectric structure includes at least one layer having an insulating property, the at least one layer including the piezoelectric layer. The first wiring electrode is provided on the layer having an insulating property in the piezoelectric structure.
Bibliography:Application Number: US202016906096