Semiconductor imaging device having improved dark current performance

• Main Authors: Liu, Jen-Cheng, Takahashi, Seiji, Shiu, Feng-Jia, Yaung, Dun-Nian, Wang, Chen-Jong, Hsu, Wei-Cheng, Wu, Wei Chuang, Sze, Jhy-Jyi, Chang, Chun-Wei, Huang, Yimin, Hung, Feng-Chi
• Format: Patent
• Language: English
• Published: 27.12.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.