Multi-zone heater model-based control in semiconductor manufacturing

A plurality of heating zones in a substrate support assembly in a chamber is independently controlled. Temperature feedback from a plurality of temperature detectors is provided as a first input to a process control algorithm, which may be a closed-loop algorithm. A second input to the process contr...

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Bibliographic Details
Main Authors Lubomirsky, Dmitry, Kaluarachchi, Don Channa, Cimino, Mauro, Vishnuprasad, Ramyashree, Phi, Son
Format Patent
LanguageEnglish
Published 20.12.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC HEATING
ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING QUANTITY OF HEAT
MEASURING TEMPERATURE
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
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Summary:A plurality of heating zones in a substrate support assembly in a chamber is independently controlled. Temperature feedback from a plurality of temperature detectors is provided as a first input to a process control algorithm, which may be a closed-loop algorithm. A second input to the process control algorithm is targeted values of heater temperature for one or more heating zones, as calculated using a model. Targeted values of heater power needed for achieving the targeted values of heater temperature for the one or more heating zones is calculated. Chamber hardware is controlled to match the targeted value of heater temperature that is correlated with the wafer characteristics corresponding to the current optimum values of the one or more process parameters.
Bibliography:Application Number: US201916515993