Image sensor grid and method of fabrication of same

An image sensor structure includes a semiconductor device, a plurality of image sensing elements formed in the semiconductor substrate, an interconnect structure formed on the semiconductor substrate, and a composite grid structure over the semiconductor substrate. The composite grid structure inclu...

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Main Authors Lin, Chin-Yu, Chen, Po-Zen, Tung, Huai-Jen, Chen, Hsien-Li, Yeh, Su-Yu, Liao, Keng-Ying
Format Patent
LanguageEnglish
Published 20.12.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An image sensor structure includes a semiconductor device, a plurality of image sensing elements formed in the semiconductor substrate, an interconnect structure formed on the semiconductor substrate, and a composite grid structure over the semiconductor substrate. The composite grid structure includes a tungsten grid, an oxide grid over the tungsten grid, and an adhesion enhancement grid spacing the tungsten grid from the oxide grid.
Bibliography:Application Number: US202016746720