Bulk substrates with a self-aligned buried polycrystalline layer

• Main Authors: Adusumilli, Siva P, Stamper, Anthony K, McCallum-Cook, Ian, Shank, Steven M
• Format: Patent
• Language: English
• Published: 13.12.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A first non-single-crystal layer is arranged beneath the trench isol...