Performing a program operation based on a high voltage pulse to securely erase data

A request to perform a secure erase operation for a memory component can be received. A voltage level that is applied to unselected wordlines of the memory component during a read operation can be determined. A voltage pulse can be applied to at least one wordline of the memory component to perform...

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Bibliographic Details
Main Authors Malshe, Ashutosh, Singidi, Harish R, Ratnam, Sampath K, Rayaprolu, Vamsi Pavan, Muchherla, Kishore Kumar
Format Patent
LanguageEnglish
Published 13.12.2022
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A request to perform a secure erase operation for a memory component can be received. A voltage level that is applied to unselected wordlines of the memory component during a read operation can be determined. A voltage pulse can be applied to at least one wordline of the memory component to perform the secure erase operation. The voltage pulse can be associated with a program operation to place a memory cell of the memory component at another voltage level that exceeds the voltage level that is applied to the unselected wordlines of the memory component during the read operation.
Bibliography:Application Number: US202017062453