Semiconductor device

According to one embodiment, a semiconductor device includes first, second, and third electrodes, a semiconductor member, and a first insulating member. The semiconductor member includes a first face and a first side face. A third insulating region is between the first face and the third electrode i...

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Bibliographic Details
Main Authors Smith, Matthew David, Mukai, Akira
Format Patent
LanguageEnglish
Published 22.11.2022
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Summary:According to one embodiment, a semiconductor device includes first, second, and third electrodes, a semiconductor member, and a first insulating member. The semiconductor member includes a first face and a first side face. A third insulating region is between the first face and the third electrode in a second direction. A first insulating region is between the first side face and the third electrode in a first direction. The first side face includes first and second side face portions. The first side face portion is between the first face and the second side face portion in the second direction. At least a first angle between a first plane including the first face and the first side face portion and a second angle between the first plane and the second side face portion is less than 90 degrees. The second angle is different from the first angle.
Bibliography:Application Number: US202117142654