Methods for forming image sensor devices

A method includes forming a dielectric layer over a first surface of a semiconductor layer, the dielectric layer including a metallization layer. The method includes forming an opening to expose a portion of the dielectric layer. The method includes forming a buffer oxide layer lining the opening. T...

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Bibliographic Details
Main Authors Sung, Chih Wei, Tung, Huai-Jen, Wu, Yen-Jou, Jen, Chi-Chung, Liao, Keng-Ying, Ku, Yu-Chien, Tsao, Tsun-kai, Chen, Po-zen, Yang, Yung-Lung, Lin, Yu-Chu
Format Patent
LanguageEnglish
Published 15.11.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method includes forming a dielectric layer over a first surface of a semiconductor layer, the dielectric layer including a metallization layer. The method includes forming an opening to expose a portion of the dielectric layer. The method includes forming a buffer oxide layer lining the opening. The method includes forming, according to a patternable layer, a recess in the buffer oxide layer partially extending from a second surface of the buffer oxide layer. The method includes removing the patternable layer. The method includes extending the recess through the buffer oxide layer and a portion of the dielectric layer to expose a portion of the metallization layer. The method includes filling the recess with a conductive material to form a pad structure configured to provide electrical connection to the metallization layer.
Bibliography:Application Number: US202016851277