Semiconductor device and method of producing a semiconductor device

• Main Authors: Harrison, Mark, Behrendt, Andreas, Imrich, Peter, Beninger-Bina, Markus, Hartl, Robert, Lindner, Reinhard, Napetschnig, Evelyn
• Format: Patent
• Language: English
• Published: 15.11.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device and a method of producing the semiconductor device are described. The semiconductor device includes: a semiconductor substrate; a metallization layer over the semiconductor substrate; a plating over the metallization layer, the plating including NiP; a passivation over the metallization layer and laterally adjacent the plating such that a surface of the plating that faces away from the semiconductor substrate is uncovered by the passivation, wherein a seam is present along an interface between the passivation and the plating; and a structure that covers the seam along a periphery of the plating and delimits a bondable area for the plating. The structure extends from the periphery of the plating onto the passivation. The structure includes an imide having a curing temperature below a recrystallization temperature of the NiP or an oxide having a deposition temperature below the recrystallization temperature of the NiP.