Resistive random access memory device and methods of fabrication

An apparatus, includes an interconnect, including a conductive material, above a substrate and a resistive random access memory (RRAM) device coupled to the interconnect. The RRAM device includes an electrode structure above the interconnect, where an upper portion of the electrode structure has a f...

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Bibliographic Details
Main Authors Asuri, Namrata S, Kothari, Hiten, Seghete, Dragos, Golonzka, Oleg, Strutt, Nathan, Chaudhari, Ameya S, Andrus, Matthew J, Van, Trinh T, Glassman, Timothy E, Wiegand, Christopher J, Ouellette, Daniel G, Hentges, Patrick J
Format Patent
LanguageEnglish
Published 01.11.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An apparatus, includes an interconnect, including a conductive material, above a substrate and a resistive random access memory (RRAM) device coupled to the interconnect. The RRAM device includes an electrode structure above the interconnect, where an upper portion of the electrode structure has a first width. The RRAM device further includes a switching layer on the electrode structure, where the switching layer has the first width and an oxygen exchange layer, having a second width less than the first width, on a portion of the switching layer. The RRAM device further includes a top electrode above the oxygen exchange layer, where the top electrode has the second width and an encapsulation layer on a portion of the switching layer, where the switching layer extends along a sidewall of the oxygen exchange layer.
Bibliography:Application Number: US201716641582