Semiconductor device electrodes including fluorine

A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode being electrically connected to the landing pad, a dielectric layer on the lower electrode, the dielectric layer extending along a profile of the lower electrode, an upper electrod...

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Bibliographic Details
Main Authors Park, Young-Lim, Ahn, Se Hyoung, An, Chang Mu, Kang, Sang Yeol, Seo, Jong-Bom
Format Patent
LanguageEnglish
Published 01.11.2022
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Summary:A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode being electrically connected to the landing pad, a dielectric layer on the lower electrode, the dielectric layer extending along a profile of the lower electrode, an upper electrode on the dielectric layer, and an upper plate electrode on the upper electrode and including first fluorine (F) therein, wherein the upper plate electrode includes an interface facing the upper electrode, and wherein the upper plate electrode includes a portion in which a concentration of the first fluorine decreases as a distance from the interface of the upper plate electrode increases.
Bibliography:Application Number: US202016916751