Semiconductor device and maunfacturing method of semiconductor device

In a semiconductor device, a first lead frame and a second lead frame are fixed to a metal conductor base by an organic insulating film made of a polyimide-based material. The organic insulating film satisfies relationships of tpress1>tcast1 and tpress2>tcast1, where tpress1 is a thickness of...

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Bibliographic Details
Main Authors Sampei, Hirokazu, Ishino, Hiroshi
Format Patent
LanguageEnglish
Published 01.11.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a semiconductor device, a first lead frame and a second lead frame are fixed to a metal conductor base by an organic insulating film made of a polyimide-based material. The organic insulating film satisfies relationships of tpress1>tcast1 and tpress2>tcast1, where tpress1 is a thickness of a portion of the organic insulating film sandwiched between the metal conductor base and the first lead frame, tpress2 is a thickness of a portion of the organic insulating film sandwiched between the metal conductor base and the second lead frame, and tcast1 is a thickness of a portion of the organic insulating film that is not sandwiched between the metal conductor base and the first lead frame and is not sandwiched between the metal conductor base and the second lead frame.
Bibliography:Application Number: US202117392446