Stacked magnetoresistive structures and methods therefor

Aspects of the present disclosure are directed to magnetic tunnel junction (MTJ) structures comprising multiple MTJ bits connected in series. For example, a magnetic tunnel junction (MTJ) stack according to the present disclosure may include at least a first MTJ bit and a second MTJ bit stacked abov...

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Bibliographic Details
Main Authors Hui, Lu, Sun, Jijun, Mancoff, Frederick, Janesky, Jason, Conley, Kevin, Ikegawa, Sumio
Format Patent
LanguageEnglish
Published 01.11.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:Aspects of the present disclosure are directed to magnetic tunnel junction (MTJ) structures comprising multiple MTJ bits connected in series. For example, a magnetic tunnel junction (MTJ) stack according to the present disclosure may include at least a first MTJ bit and a second MTJ bit stacked above the first MTJ bit, and a resistance state of the MTJ stack may be read by passing a single read current through both the first MTJ bit and the second MTJ bit.
Bibliography:Application Number: US201917255915