Method for fabricating a semiconductor device

• Main Authors: Li, Kun-Ju, Lin, Wen-Chin, Liu, Hsin-Jung, Hou, Chau-Chung, Chan, Ang
• Format: Patent
• Language: English
• Published: 25.10.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor substrate is provided. The semiconductor substrate has thereon a first dielectric layer, at least one conductive pattern disposed in the first dielectric layer, and a second dielectric layer covering the first dielectric layer and the at least one conductive pattern. A via opening is formed in the second dielectric layer. The via opening exposes a portion of the at least one conductive pattern. A polish stop layer is conformally deposited on the second dielectric layer and within the via opening. A barrier layer is conformally deposited on the polish stop layer. A tungsten layer is conformally deposited on the barrier layer. The tungsten layer and the barrier layer are polished until the polish stop layer on the second dielectric layer is exposed, thereby forming a via plug in the via opening. A bottom electrode layer is conformally deposited on the second dielectric layer and the via plug.