Spin orbit torque (SOT) memory devices with enhanced magnetic anisotropy and methods of fabrication
A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit coupling material and a perpendicular magnetic tunnel junction (pMTJ) device on a portion of the electrode. The pMTJ device includes a free magnet, a fixed magnet and a tunnel barrier layer in between, wh...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
18.10.2022
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Subjects | |
Online Access | Get full text |
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Summary: | A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit coupling material and a perpendicular magnetic tunnel junction (pMTJ) device on a portion of the electrode. The pMTJ device includes a free magnet, a fixed magnet and a tunnel barrier layer in between, where at least one of the fixed magnet or the free magnet includes two magnetic layers and a spacer layer comprising tungsten in between. |
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Bibliography: | Application Number: US201816144978 |