Etchant for etching a cobalt-containing member in a semiconductor structure and method of etching a cobalt-containing member in a semiconductor structure

• Main Authors: Chen, Ren-Kai, Lin, Shun Wu, Huang, Kuo-Bin, Lee, Li-Chen, Yeh, Ming-Hsi
• Format: Patent
• Language: English
• Published: 18.10.2022
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; SEMICONDUCTOR DEVICES

A method of etching a cobalt-containing member in a semiconductor structure includes providing an etchant including a fluorine-free acid and an alkaline solution having a pH value between 8.5 and 13, and etching the cobalt-containing member in the semiconductor structure using the etchant, wherein a rate of etching the cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant. An etchant for etching a cobalt-containing member in a semiconductor structure includes a fluorine-free acid, and an alkaline solution having a pH value between 8.5 and 13; wherein a rate of etching a cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant, and a level of dissolved oxygen of the etchant is substantially less than or equal to 100 ppb.