Memory power-gating techniques

Various implementations described herein are related to a device having memory circuitry activated by a power-gated supply. The device may include level shifting circuitry that receives a switch control signal in a first voltage domain, shifts the switch control signal in the first voltage domain to...

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Bibliographic Details
Main Authors Gupta, Lalit, Dray, Cyrille Nicolas, Boujamaa, El Mehdi
Format Patent
LanguageEnglish
Published 11.10.2022
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Various implementations described herein are related to a device having memory circuitry activated by a power-gated supply. The device may include level shifting circuitry that receives a switch control signal in a first voltage domain, shifts the switch control signal in the first voltage domain to a second voltage domain, and provides the switch control signal in the second voltage domain. The device may include power-gating circuitry activated by the switch control signal in the second voltage domain, and the power-gating circuitry may provide the power-gated supply to the memory circuitry to trigger activation of the memory circuitry with the power-gated supply when activated by the switch control signal in the second voltage domain.
Bibliography:Application Number: US202016942708