Integrated circuit devices including metal wires having etch stop layers on sidewalls thereof

• Main Authors: Bae, Taeyong, Seo, Hoonseok
• Format: Patent
• Language: English
• Published: 20.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a first insulating layer and a plurality of metal wires on the first insulating layer. The plurality of metal wires may include a first metal wire including a first upper surface and a first lower surface that faces the first insulating layer and a second metal wire including a second upper surface and a second lower surface that faces the first insulating layer and is coplanar with the first lower surface. The first metal wire may have a first width monotonically decreasing from the first lower surface to the first upper surface, and the second metal wire may have a second width monotonically increasing from the second lower surface to the second upper surface.