Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy and method of making the same

A magnetoresistive element comprises a novel iPMA cap layer on a surface of a recording layer to induce a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer and a method of making the same. The recording layer comprises a first free layer immediately contacting to th...

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Bibliographic Details
Main Authors Guo, Yimin, Xiao, Rongfu, Chen, Jun
Format Patent
LanguageEnglish
Published 20.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
MAGNETS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
TRANSFORMERS
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Summary:A magnetoresistive element comprises a novel iPMA cap layer on a surface of a recording layer to induce a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer and a method of making the same. The recording layer comprises a first free layer immediately contacting to the tunnel barrier layer and having a body-centered cubic structure with a (100) texture, and a second free layer having a body-centered cubic structure with a (110) texture or a face-centered cubic structure with a (111) texture, and a crystal-breaking layer inserted between the first free layer and the second free layer.
Bibliography:Application Number: US202017105381