Computational metrology based correction and control

A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selec...

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Bibliographic Details
Main Authors Kou, Weitian, Lambregts, Cornelis Johannes Henricus, Grouwstra, Cédric Désiré, Rijpstra, Manouk, Chen, Chang-Wei, Smorenberg, Pieter Gerardus Jacobus, Tel, Wim Tjibbo, Nien, Chi-Fei, Roy, Sarathi
Format Patent
LanguageEnglish
Published 20.09.2022
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.
Bibliography:Application Number: US201816954384